1/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.c (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2sb1412 ? denotes h fe low frequency transistor ( ? 20v, ? 5a) 2sb1412 z features z dimensions (unit : mm) 1) low v ce(sat) . v ce(sat) = ? 0.35v (typ.) (i c /i b = ? 4a / ? 0.1a) 2) excellent dc current gain characteristics. 3) complements the 2sd2118. z structure epitaxial planar type pnp silicon transistor z absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? 1 single pulse, pw=10ms parameter v cbo v ceo v ebo p c tj tstg ?30 v v v a(dc) c c ?20 ?6 ?5 i c a(pulse) ?10 ? 1 w 1 10 w(tc =25 c ) 2sb1412 150 ?55 to 150 symbol limits unit z electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance ? measured using pulse current. parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ?30 ?20 ?6 ? ? 82 ? ? ? ? ? ? ? ? ? ? ? 120 0.35 60 ? ? ? ?0.5 ?0.5 390 ?1.0 ? ? vi c = ?50 a i c = ?1ma i e = ?50 a v cb = ?20v v eb = ?5v v ce = ?2v, i c = ?0.5a i c /i b = ?4a/ ?0.1a v ce = ?6v, i e =50ma, f=100mhz v cb = ?20v, i e =0a, f=1mhz v v a a ? v mhz pf typ. max. unit conditions transition frequency
2/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.c data sheet 2sb1412 z packaging specifications and h fe package code taping basic ordering unit (pieces) tl 2500 h fe pqr 2sb1412 type h fe values are classified as follows : item p q r h fe 82 to 180 120 to 270 180 to 390 z electrical characteristic curves fig.1 grounded emitter propagation characteristics collector current : i c (a) base to emitter voltage : v be (v) 0 ?1 .4 ?1.2 ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 ?1m ?2m ?5m ?10m ?20m ?200m ?100m ?50m ?500m ?1 ?2 ?10 ?5 v ce = ? 2v 25 c ? 25 c ta = 100 c fig.2 grounded emitter output characteristics collector current : i c (a) collector to emitter voltage : v ce ( v) 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2. 0 ?1 ?2 ?3 ?5 ?4 0 i b =0a ? 20ma ? 25ma ? 30ma ? 10ma ? 5ma ? 15ma ta=25 c ? 50ma ? 45ma ? 40ma ? 35ma fig.3 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (a) ta = 25 c ? 2v v ce = ?5v ? 1v ? 1m ? 5m ? 0.01 ? 0.05 ? 1 ? 2 ? 5 ? 1 0 ? 2m 100 200 500 1k 2k 5k 50 20 10 5 ? 0.02 ? 0.1 ? 0.5 ? 0.2 fig.4 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (a) v ce = ?1v ? 1m ? 5m ? 0.01 ? 0.05 ? 1 ? 2 ? 5 ? 1 0 ? 2m 100 200 500 1k 2k 5k 50 20 10 5 ? 0.02 ? 0.1 ? 0.5 ? 0.2 25 c ? 25 c ta = 100 c fig.5 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (a) ? 1m ? 5m ? 0.01 ? 0.05 ? 1 ? 2 ? 5 ? 1 0 ? 2m 100 200 500 1k 2k 5k 50 20 10 5 ? 0.02 ? 0.1 ? 0.5 ? 0.2 25 c ? 25 c ta = 100 c v ce = ?2v fig.6 collector-emitter saturation voltage vs. collector current ( ) i c /i b =50/1 /1 ta=25c 40/1 30/1 10/1 collector saturation voltage : v ce(sat) (v ) collector current : i c (a) ? 1 ? 2 ? 5 ? 1 0 ? 0.0 ? -0.02 ? 0.1 ? 0.2 ? 0.5 ? 0.05 ? 2m ? 5m ?0.01 ?2 ?1 ?0.5 ?0.2 ?0.1 ?0.05 ?0.02 ?5 f ig.7 collector-emitter saturation voltage vs. collector current ( ) ta = 100 c 25 c l c /l b =10 ?25 c collector saturation voltage : v ce(sat) (v ) collector current : i c (a) ? 1 ? 2 ? 5 ? 1 0 ? 0.01 ? 0.02 ? 0.1 ? 0.2 ? 0.5 ? 0.05 ? 2m ? 5m ? 0.01 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.05 ? 0.02 ? 5 fig.8 collector-emitter saturation voltage vs. collector current ( ) ta = 100 c ?25 c 25 c l c /l b =30 collector saturation voltage : v ce(sat) (v ) collector current : i c (a) ? 1 ? 2 ? 5 ? 1 0 ? 0.01 ? 0.02 ? 0.1 ? 0.2 ? 0.5 ? 0.05 ? 2m ? 5m ? 0.01 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.05 ? 0.02 ? 5 fig.9 collector-emitter saturation voltage vs. collector current ( ) ta = 100 c ?25 c 25 c l c /l b =40 collector saturation voltage : v ce(sat) (v ) collector current : i c (a) ? 1 ? 2 ? 5 ? 1 0 ? 0.01 ? 0.02 ? 0.1 ? 0.2 ? 0.5 ? 0.05 ? 2m ? 5m ? 0.01 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.05 ? 0.02 ? 5
3/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.c data sheet 2sb1412 fig.10 collector-emitter saturation voltage vs. collector current ( ) collector saturation voltage : v ce(sat) (v ) collector current : i c (a) ? 1 ? 2 ? 5 ? 1 0 ? 0.01 ? 0.02 ? 0.1 ? 0.2 ? 0.5 ? 0.05 ? 2m ? 5m ? 0.01 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.05 ? 0.02 ? 5 ?25 c l c /l b =50 25 c ta = 100 c fig.11 gain bandwidth product vs. emitter current emitter current : i e (ma) transeition frequency : f t (mhz) 1 2 5 10 50 100 200 500 20 20 50 100 200 500 1 000 10 5 2 1 100 0 ta = 25c v ce = ?6v fig.12 collector output capacitance vs. collector-base voltage collector output capacitance : cob (pf ) collector to base voltage : v cb (v ) ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?5 0 1000 500 200 100 50 10 20 ta = 25c f = 1mhz i e = 0a fig.13 emitter input capacitance vs. emitter-base voltage emitter intput capacitance : cib (pf) emitter to base voltage : v eb (v) 10 20 50 100 200 500 1000 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?1 0 ta = 25c f = 1mhz i c = 0a collector to emitter voltage : ?v ce ( v) collector current : i c (a) 0.2 0.5 12 5 10 20 50 100 500200 50 5 20 2 10 1 200 m 100 m 50m 20m 10m 500 m 100 fig.14 safe operation area f(2sb1412) dc ta=25c ? single nonrepetitive pulse pw=10ms pw = 100ms
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